Mumbai, Mar 16: RIR Power Electronics Limited (Bombay Stock Exchange: BSE)today announced expansion of its product portfolio with the introduction of New Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) used for high efficiency and reliability.
MOSFETs are widely deployed in EV onboard chargers & charging infrastructure, traction inverters, MW Charging System (MCS), solar inverters, energy storage, UPS, power supplies, motor drives, test equipment, welding, industrial equipment.
Along with MOSFETs, RIR recently introduced Merged-PiN Schottky (MPS) Diodes designed for demanding applications including electric vehicles (EVs & HEVs), data centres and AI infrastructure, renewable energy and grid systems, industrial drives, aerospace and defence, and green hydrogen and electrolysis systems, where efficiency, ruggedness, and thermal performance are critical.
Dr. Harshad Mehta, Non-Executive Chairman, RIR Power Electronics Ltd, said:
“With the addition of 1200V SiC MOSFET to our portfolio, we are advancing the accessibility and reliability of high-performance Silicon Carbide solutions for next-generation power applications. Backed by decades of expertise in high-power semiconductors, we empower designers globally to confidently unlock the full potential of SiC efficiently and at scale across demanding segments such as electric vehicles, data centres, renewable energy, and industrial systems.
Decades of high-power semiconductor leadership
RIR brings over 55 years of high-power semiconductor expertise to its SiC portfolio and is uniquely positioned as India’s only player with existing high-power semiconductor fabrication capability, with proven experience in devices rated up to 20,000V and 12,000A. Supported by global development operations in the U.S. and its forthcoming first-of-its-kind SiC manufacturing campus in Odisha, India, RIR is building a vertically integrated SiC ecosystem spanning device design, wafer processing, packaging, and application support, enabling the delivery of high-voltage, high-reliability SiC MOSFETs and diodes optimized for electrical performance, manufacturability, and long-term system reliability.
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